tip29, 30 high power bipolar transistor page 1 31/05/05 v1.0 features: ? collector-emitter sustaining voltage- v ceo(sus) = 60v (minimum) - tip29a, TIP30a = 100v (minimum) - tip29c, TIP30c. ? collector-emitter saturation voltage- v ce(sat) = 0.7v (maximum) at i c = 1.0a. ? current gain-bandwidth product f t = 3.0mhz (minimum) at i c = 200ma. dimensions minimum maximum a 14.68 15.31 b 9.78 10.42 c 5.01 6.52 d 13.06 14.62 e 3.57 4.07 f 2.42 3.66 g 1.12 1.36 h 0.72 0.96 i 4.22 4.98 j 1.14 1.38 k 2.20 2.97 l 0.33 0.55 m 2.48 2.98 o 3.70 3.90 dimensions : millimetres pin 1. base 2. collector 3. emitter 4. collector(case). npn pnp tip29a TIP30a tip29c TIP30c 1.0 ampere complementary silicon power transistors 40 - 100 volts 30 watts to-220
tip29, 30 high power bipolar transistor page 2 31/05/05 v1.0 thermal characteristics maximum ratings characteristic symbol maximum unit thermal resistance junction to case r jc 4.167 c/w characteristic symbol tip29a TIP30a tip29c TIP30c unit collector-emitter voltage v ceo 60 100 v collector-base voltage v cbo emitter-base voltage v ebo 5.0 collector current-continuous -peak i c 1.0 3.0 a base current i b 0.4 total power dissipation at t c = 25c derate above 25c p d 30 0.24 w w/c operating and storage junction temperature range t j , t stg -65 to +150 c figure - 1 power derating
tip29, 30 high power bipolar transistor page 3 31/05/05 v1.0 characteristic symbol minimum maximum unit off characteristics collector-emitter sustaining voltage (1) (i c = 30ma, i b = 0) tip29a, TIP30a tip29c, TIP30c v ceo(sus) 60 100 - v collector cut off current (v ce = 30v, i b = 0) tip29a, TIP30a (v ce = 60v, i b = 0) tip29c, TIP30c i ceo - 0.3 ma collector cut off current (v ce = 60v, v eb = 0) tip29a, TIP30a (v ce = 100v, v eb = 0) tip29c, TIP30c i ces - 0.2 emitter cut off current (v eb = 5.0v, i c = 0) i ebo - 1.0 electrical characteristics (t c = 25c unless otherwise noted) dc current gain (i c = 0.2a, v ce = 4.0v) (i c = 1.0a, v ce = 4.0v) h fe 40 15 - 75 - collector-emitter saturation voltage (i c = 1.0a, i b = 125ma) v ce(sat) - 0.7 v base-emitter on voltage (i c = 1.0a, v ce = 4.0v) v be(on) - 1.3 dynamic characteristics current gain-bandwidth product (2) (i c = 200ma, v ce = 10v, f = 1mhz) f t 3.0 - mhz small signal current gain (i c = 200ma, v ce = 10v, f = 1khz) h fe 20 - - on characteristics (1) (1) pulse test: pulse width 300 s, duty cycle 2.0%. (2) f t= h fe ? f test.
tip29, 30 high power bipolar transistor page 4 31/05/05 v1.0 there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown safe operating area curves indicate i c -v ce limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure - 6 curve is based on t j(pk) = 150c; t c is variable depending on power level. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150c. at high case temperatures, thermal limitation will reduce the power that can be handled to values less than the limitations imposed by second breakdown. figure - 2 turn-on time figure - 3 switching time equivalent circuit figure - 4 dc current gain figure - 5 turn-off time figure - 6 active region safe operating area
tip29, 30 high power bipolar transistor page 5 31/05/05 v1.0 type part number npn tip29a tip29c pnp TIP30a TIP30c specifications
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